AP9575GH (E6)

Type Designator: AP9575GH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 31.3 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 15 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 17 nS
   Drain-Source Capacitance (Cd): 115 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm